To achieve this, multiple challenges must be overcome, including reducing the contact resistance, developing stable and controllable doping schemes, advancing mobility engineering and improving high- κ dielectric integration. Nature Electronics volume 4, pages 786–799 ( 2021) Cite this articleįield-effect transistors based on two-dimensional (2D) materials have the potential to be used in very large-scale integration (VLSI) technology, but whether they can be used at the front end of line or at the back end of line through monolithic or heterogeneous integration remains to be determined. Transistors based on two-dimensional materials for future integrated circuits
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